MOSFET HY1906 HY1906P TO-220 130A 65V (Kênh N)
Thông số kỹ thuật:
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 65V
Current - Continuous Drain (Id) @ 25°C 130A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.5 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 460pF @ 25V
FET Feature -
Power Dissipation (Max) 60W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Datasheet:
https://datasheetspdf.com/pdf-file/790698/HOOYI/HY1906P/1